bsc019n02ks g opti mos ?2 power-transistor features ? for fast switching converters and sync. rectification ? qualified according to jedec 1) for target applications ? super logic level 2.5v rated; n-channel ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? superior thermal resistance ? avalanche rated ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =4.5 v, t c =25 c 100 a v gs =4.5 v, t c =100 c 100 v gs =2.5 v, t c =25 c 100 v gs =2.5 v, t c =100 c 95 v gs =4.5 v, t a =25 c, r thja =45 k/w 2) 30 pulsed drain current i d,pulse t c =25 c 3) 200 avalanche energy, single pulse e as i d =50 a, r gs =25 ? 800 mj reverse diode d v /d t d v /d t i d =50 a, v ds =16 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 12 v value 1) j-std20 and jesd22 v ds 20 v r ds(on),max 1.95 m ? i d 100 a product summary type package marking bsc019n02ks g pg-tdson-8 019n02ks pg-tdson-8 rev. 1.41 page 1 2010-07-01
bsc019n02ks g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 104 w t a =25 c, r thja =45 k/w 2) 2.8 operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc bottom - - 1.2 k/w top 18 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 2) --45 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 20 - - v gate threshold voltage v gs(th) v ds = v gs , i d =350 a 0.7 0.95 1.2 zero gate voltage drain current i dss v ds =20 v, v gs =0 v, t j =25 c --1a v ds =20 v, v gs =0 v, t j =125 c - - 100 gate-source leakage current i gss v gs =12 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =2.5 v, i d =50 a - 2.3 3.0 m ? v gs =4.5 v, i d =50 a - 1.6 1.95 gate resistance r g - 1.9 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =50 a 100 210 - s 3) see figure 3 value values 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 1.41 page 2 2010-07-01
bsc019n02ks g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 9600 13000 pf output capacitance c oss - 2700 3600 reverse transfer capacitance c rss - 410 620 turn-on delay time t d(on) -15-ns rise time t r - 187 - turn-off delay time t d(off) -95- fall time t f -8- gate char g e characteristics 4) gate to source charge q gs - 19 25.1 nc gate charge at threshold q g(th) - 9 12.1 gate to drain charge q gd - 11 16.9 switching charge q sw - 21 29.8 gate charge total q g - 64 85.0 gate plateau voltage v plateau - 2.0 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 59 78.5 nc output charge q oss v dd =10 v, v gs =0 v -37- reverse diode diode continuous forward current i s - - 100 a diode pulse current i s,pulse - - 400 diode forward voltage v sd v gs =0 v, i f =50 a, t j =25 c - 0.8 1.2 v reverse recovery charge q rr v r =10 v, i f =50 a, d i f /d t =100 a/s - 55.6 - nc 4) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =10 v, f =1 mhz v dd =10 v, v gs =4.5 v, i d =50 a, r g =1.6 ? v dd =10 v, i d =50 a, v gs =0 to 4.5 v rev. 1.41 page 3 2010-07-01
bsc019n02ks g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 4.5 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 0 40 80 120 160 t c [c] p tot [w] 0 20 40 60 80 100 120 0 40 80 120 160 t c [c] i d [a] rev. 1.41 page 4 2010-07-01
bsc019n02ks g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 1.8 v 2 v 2.2 v 2.5 v 3 v 3.5 v 4.5 v 0 1 2 3 4 5 6 7 8 9 0 1020304050 i d [a] r ds(on) [mw] 25 c 150 c 0 25 50 75 100 0123 v gs [v] i d [a] 0 50 100 150 200 250 300 350 0 25 50 75 100 i d [a] g fs [s] 1.6 v 1.8 v 2 v 2.2 v 2.4 v 2.5 v 3 v 4 v 0 25 50 75 100 125 150 175 200 0123 v ds [v] i d [a] rev. 1.41 page 5 2010-07-01
bsc019n02ks g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =50 a; v gs =4.5 v v gs(th) =f( t j ); v gs = v ds 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 -60 -20 20 60 100 140 t j [c] r ds(on) [m ? ] ciss coss crss 10 5 10 4 10 3 10 2 0 5 10 15 20 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 10 3 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 350 a 3500 a 0 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 t j [c] v gs(th) [v] rev. 1.41 page 6 2010-07-01
bsc019n02ks g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =50 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 16 18 20 22 24 -60 -20 20 60 100 140 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 t av [s] i av [a] 4 v 10 v 16 v 0 1 2 3 4 5 0 20406080 q gate [nc] v gs [v] rev. 1.41 page 7 2010-07-01
bsc019n02ks g package outline pg-tdson-8 pg-tdson-8: outline footprint dimensions in mm rev. 1.41 page 8 2010-07-01
bsc019n02ks g package outline pg-tdson-8: tape dimensions in mm rev. 1.41 page 9 2010-07-01
bsc019n02ks g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be reg arded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and condi tions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon t echnologies office. infineon technologies components may be used in life-support de vices or systems only with the express written approval of infineon technologies, if a fai lure of such components can reasonably be expected to cause the failure of that life-suppor t device or system or to affect the safety or effectiveness of that device or system. life supp ort devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 1.41 page 10 2010-07-01
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